Publications
Articles
2007
Etch mechanisms of hybrid low-k material (SiOCH with porogen) in fluorocarbon based plasma
D. Eon, M. Darnon, T. Chevolleau, T. David, L. Vallier, O. Joubert
J. Vac. Sci. Technol.B, in press (2007)
Analyses of chamber walls coatings during the patterning of ultra low-k materials with a metal hard mask : consequences on cleaning strategies
T. Chevolleau, M. Darnon, T. David, N. Posseme, J. Torres and O. Joubert
J. Vac. Sci. Technol.B, in press (2007)
2006
Etching characteristics of TiN used as hard mask in dielectric etch process
M.Darnon, T. Chevolleau, D. Eon, J. Torres,L. Vallier and O. Joubert
J. Vac. Sci. Technol.B, 24, 2262 (2006)
Plasma etching of HfO2 at elevated temperatures in chlorine-based chemistry
M. Helot, T. Chevolleau, L. Vallier, O. Joubert, E. Blanquet, A. Pisch, P. Mangiagalli, T. Lill
To be published in J. Vac. Sci. Technol. A 24, Jan/Feb 2006
2005
Towards a controlled patterning of 10 nm silicon gates in high density plasmas
E. Pargon, M. Darnon, O. Joubert, T. Chevolleau, and L. Vallier, T. Lill, L. Mollard
J. Vac. Sci. Technol. B, Vol. 23, 1913, No. 5, (2005)
A Novel Low-Damage Methane-Based Plasma Ash Chemistry (CH4/Ar) : Limiting Metal Barrier Diffusion into Porous Low-k Materials
N. Possémé, T. David, T. Chevolleau, and O. Joubert
Electrochemical and Solid-State Letters,Vol 8(5), pp. G112-G114, (2005)
2004
Etching of porous SiOCH materials in fluoro-carbon based plasmas
N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and N. Rochat
J. Vac. Sci. Technol. B 22, 2772, (2004)
Correlation and interaction between sidewalls passivation and chamber wall deposition during silicon gate etching
M. Kogelschatz, G. Cunge, L. Vallier, O. Joubert and N. Sadeghi
Contributions to plasma physics 44(5-6),436, (2004)
Analysis of the chemical composition and deposition mechanism of SiOX-ClY layer on the plasma chamber walls during silicon gate etching
M.Kogelschatz, G.Cunge and N.Sadeghi
J.Vac.Sci.Technol. A,22,624, (2004)
Monitoring chamber walls coating deposited during plasma processes : application to silicon gate etch processes
O. Joubert, G. Cunge, B. Pelissier, L. Vallier, M. Kogelschatz and E. Pargon
J. Vac. Sci. Technol. A, 22,553, (2004)
Resist pattern transformation studied by X-ray Photoelectron Spectroscopy after exposure to reactive plasmas (I) : methodology and examples
E. Pargon, O. Joubert, N. Posseme, and L. Vallier
J. Vac. Sci. Technol. B 22, 1858, (2004)
Mass spectrometry studies of resist trimming processes in HBr/O2 and Cl2/O2 chemistries
E. Pargon, O. Joubert, T. Chevolleau, G. Cunge, S. Xu and T. Lill
J. Vac. Sci. Technol. B 23(1), 103, (2004)
2003
Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas
X. Detter, R. Palla, I. Thomas-Boutherin, E. Pargon, G. Cunge, O. Joubert and L. Vallier
J. Vac. Sci. Technol. B , 21 (5), (2003)
Enhancement of the recombination rate of Br and Cl atoms by CF4 addition in HBr/Cl2/O2 plasmas used for silicon gate etching
G. Cunge, O. Joubert and N. Sadeghi
Journal of Applied Physics 94 (10), 6285, (2003)
Nanometer scale linewidth control during etching of polysilicon gates in high density plasmas
O. Joubert, E. Pargon, J. Foucher, X. Detter, G. Cunge and L. Vallier
Microelectronic Engineering, vol.69 (2-4), 350, (2003)
Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas
L. Vallier, J. Foucher, X. Detter , E. Pargon, O. Joubert, G. Cunge, and T. Lill
J. Vac. Sci. Technol. B 21, 904, (2003)
Etching Mechanisms of low-k SiOCH and selectivity to SiCH and SiO2 in fluorocarbon based plasmas
N. Posseme, T. Chevolleau, O. Joubert, and L. Vallier
J. Vac. Sci. Technol. B 21, 2432, (2003)
Dual Damascene trench depth control by iRM : a novel interferometric endpoint system
P. Mangiagalli, T. Chevolleau, N. Possémé, L. Vallier, O. Joubert
Advanced Semiconductor Manufacturing Conference, Munich, Germany, (2003)
Etching of low k interconnect materials for next generation devices
T. Chevolleau, O. Joubert, N. Possémé, L. Vallier, I. Thomas-Boutherin
203rd meeting of the Electrochemical Society (ECS), Paris, France, (2003, Electro Chemical Society Proceedings, (2003)
Characterisation of layers deposited on reactor walls by plasma etching
M. Kogelschatz, G. Cunge, N. Sadeghi, and O. Joubert
Frontiers in Low Temperature Plasma Diagnostics V, Cagliari, Italie, (2003), Conf. proceedings, 130, (2003)
2002
Silicon gate notching for patterning features with dimensions smaller than the resolution of lithography
J. Foucher, G. Cunge, L. Vallier, and O. Joubert
Microelectronic Enginering, vol. 61-62, pp.849-857, 2002
Ion flux composition in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 chemistries during silicon etching in industrial high density plasmas
G. Cunge, R.L. Inglebert, O. Joubert, L. Vallier and N. Sadeghi
J. Vac. Sci. Technol. B 20 (5), 2137, (2002)
Chlorine dissociation fraction in an inductively coupled plasma measured by ultraviolet absorption spectroscopy
F. Neuilly, J. P. Booth, L. Vallier
J. Vac. Sci. Technol. A20(1), 225, (2002)
Design of notched gate processes in high density plasmas
J. Foucher, O. Joubert, G. Cunge, L. Vallier
J. Vac. Sci. Technol. B 20, 2024, (2002)
Effect of surface polymerization on plasma and process stability in polycrystalline-silicon etching
S. Xu, T. Lill, S. Deshmukh, O. Joubert
J. Vac. Sci. Technol. A 20, 2123, (2002)
Gate patterning for ultimate CMOS device fabrication
O. Joubert, L. Vallier, G.Cunge, J. Foucher, X.Detter, E. Pargon
Gordon Research Conference, Tilton, New Hampshire, USA, (2002)
Mass spectrometry analysis of the plasma wall interaction during silicon gate etching in HBr/Cl2/O2 and CF4 plasmas
G. Cunge, O. Joubert, N. Sadeghi and L. Vallier
16th European Conference on Atomic and Molecular Physic of Ionized Gases and Fifth International Conference on Reactive Plasmas, ESCAMPIG16-ICRP5 proceedings, 179, (2002)
Analysis of the etching and deposition mechanisms of SiO-CFX layers on the plasma chamber walls during silicon gate etching
M. Kogelschatz, G. Cunge and N. Sadeghi
16th European Conference on atomic and Molecular Physic of Ionized Gases and Fifth International Conference on Reactive Plasmas, ESCAMPIG16-ICRP5 proceedings, 179, (2002)
2001
Plasma etching processes for sub-50nm Ultra Large Scale Integration Technology
O. Joubert, L. Vallier, J. Foucher, D. Fuard, G. Cunge, M. Assous and R. Blanc
Le vide, les couches minces, (2001)
X-ray photoelectron Spectroscopy investigation of sidewall passivation films formed during gate etch processes
L. Desvoivres, L. Vallier, and O. Joubert
J. Vac. Sci. Technol. B19(2), 420, (2001)
High density plasma etching of low k dielectric polymers in Oxygen-based chemistries
D. Fuard, O. Joubert, L. Vallier, M.Bonvalot
J. Vac. Sci. Technol. B19(2), 447, (2001)
Etch mechanism of low dielectric constant polymers in high density plasmas : Impact of charging effects on profile distortion during the etching process
D. Fuard, O. Joubert, L. Vallier, M. Assous, P. Berruyer and R. Blanc
J. Vac. Sci. Technol. B19(6), 2223, (2001)
Chemical Topography analysis using XPS during plasma etching in Si processing
L. Vallier, O. Joubert, G. Cunge, and J. Foucher
Frontiers in Low Temperature Plasma Diagnostics IV, Rolduc, Hollande, (2001) Conf. proceedings, 60, (2001)
Fundamentals limitations in the design of front end and back end plasma etch processes
O. Joubert, L. Vallier, J. Foucher, D. Fuard, G. Cunge, M. Assous,, and R. Blanc
Proceedings of P2ID’01, 6th International Symposium on Plasma and Process Induced Damage, Monterey, USA, (2001)
Plasma etching of nano-scale feature in Silicon : application to ultimate CMOS gates and quantum nanowires
G. Cunge, J. Foucher, L. Vallier, O. Joubert
Proceedings of the 15th International Symposium on Plasma Chemistry (ISPC), Orléans, France, (2001)
Thèses
2004
Erwine Pargon
Analyse des mécanismes mis en jeu lors de l’élaboration par gravure plasma de structures de dimensions déca-nanométriques : Application au transistor CMOS ultime
Thèse UJF soutenue le 3 décembre 2004
