Centura 5200 plasma etching cluster
Centura 5200 Applied Materials etch platform is equipped with three plasma reactors designed for plasma etching processes of 200 mm wafers:
- An Inductively Coupled Plasma (ICP) reactor (DPS) for polysilicon or metal etching
- An Inductively Coupled Plasma (ICP) reactor with hot cathode for the etching of magnetic materials and other difficult materials to be etched (DPS+)
- A Capacitive coupled plasma (CCP) reactor for Dielectric etching(eMax)
The platform is connected to a customized XPS analysis chamber (customized 220I system from VG scientific) thus allowing vacuum transfer of the processed wafer for further surface analysis. Each chamber was modified to implement diagnostics such as mass spectrometry, Laser or broad-band UV absorption, spectroscopic ellipsometry, ion flux probe, ... in order to probe the plasma gas phase and/or the surface being etched. Right side figure shows the hardware added to the platform that is needed to run the broad band UV absorption experiment and the ellipsometer.
