3D integration based on nanowires growth

Nanowires (NWs) are promising materials for some of the basic building blocks in microelectronics (interconnects, transistor channel, nanoelectrodes, etc.) as well as for emerging applications in the areas of photonics, chemical sensing, and solar cells.

In our team, we have developed a global approach covering the elaboration and material study, the integration of the NWs in functional devices and the characterization of their physical properties. Our objectives are to develop all the different blocks required for 3D integration of nanowires devices and also applications for solar cells.


Si NWs growtn by catalyzed CVD	Mechanical properties of individual NW probed by AFM

Main studies in LTM 3D Integration based on nanowires growth :

Nanowires for “planar” like devices (horizontal channel)

Direct growth of nanowires in place as a FET channel

Nanowires vertical devices

Gate all-around structure improves electrostatic control
Vertical architecture
Longitudinal and radial heterostructures

Common development

CMOS compatible catalyst and processes
Placement
Growth direction
Doping
Interface passivation
Contacts
3D stacking