Memories operating at high temperature

Semiconductor Flash memory is an essential component of modern electronic systems which has gained a strategic position in the last decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for the IC (Integrated Circuits) companies.

To extend the classical floating gate technology to the 32nm technological node (i.e. density of integration of 16-32 Gbit), different “evolutionary paths”, based on the use of new materials (as nanocrystals for storage nodes, high-k insulators as resistive materials) are investigated.

On the other hand, to address the 22nm and smaller IC generations (i.e. density of integration higher than 32-64 Gbit), we have started to investigate “disruptive paths”, based on new storage mechanisms or new technologies such as Phase- Change devices.


MIM capacitors devices	Resistive curve for PCRAM memory device

Main studies in LTM to improve memories performances are :

Charge traps

Size and density control of charge traps by using copolymer diblocks self-assembly technology
Investigation of metallic materials

Resistive RAM

Modeling (understanding the resistive switching mechanisms…)

PC RAM

Miniaturization of the memory point
Development of a MOCVD deposition method
Self-assembling of memory point using copolymer blocks technology