Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties
Gourvest E., Pelissier B., Vallée C., Roule A., Lhostis S., Maitrejean S.
Journal of The Electrochemical Society, 159 (4) H373-H377
Dielectrics for resistive non-volatile memories
Vallee C., Gonon P., Mannequin C., Grampeix H., Jousseaume V.
JCMM 2012
Materials and processes for non-volatile resistive memories
Vallee C., Gonon P., Mannequin C., Gourvest E., Dussault L., Grampeix H., Jousseaume V., Michallon P., Maitrejean S.
MAM 2012
Large scale catalytic growth of grapheme on nickel for transparent conductive electrodes
Delamoreanu A., Rabot C., Vallée C., Zenasni A.
2012 MRS Spring Meeting
Time dependent resistance switching in HfO2 probed under a constant voltage stress mode
Mannequin C., Gonon P., Vallée C., Salaun A., Jousseaume V., Grampeix H.
2012 MRS Spring Meeting
Improvement of HfO2 ReRAM performances through electrode processing
Vallée C., Mannequin C., Gonon P., Salaun A., Grampeix H., Jousseaume V.
2012 MRS Spring Meeting
Patterning of GexSbxTey for non volatile phase-change memory applications
Salhi B., Chevolleau T., Vizioz C., Jahan C., Maitrejean S., Vallée C., Baron T., Joubert O.
PESM 2012
Role of H2 plasma in PE-MOCVD of GeTe materials for Phase Change Memory Applications
Dussault L., Vallée C., Gourvest E., Jourde D., Maitrejean S., Michallon P.
MAM 2012
Evaluation of plasma parameters on PEALD deposited TACN
Piallat F., Beugin V., Gassilloud R., Michallon P., Dussault L., Pelissier B., Asikainen T., Maes J.W., Morin P., Vallée C.
MAM 2012
Influence of process parameters and thermal treatment on the properties of high k oxides grown using atomic layer deposition for resistive RAM applications
Salaun A., Grampeix H., Beugin V., Mannequin C., Gonon P., Vallée C., Martinez E., Pierre F., Buckley J., Jousseaume V.
MAM 2012
No entry for this year
No entry for this year
